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| Photodiode-Chip 16.05.2008 Wavelength range Infrared 1350 20 O1000 EPC-1300-1.0-0 rev. 07 Electrodes P (anode) up Type Planar Technology InGaAs/InP typ. dimensions in m typ. thickness 330 (20) m anode Description Broadband photodiode with maximum response in the NIR-region (800-1750 nm) 1350 20 bond gold 1.0 m cathode gold alloy, 0.5 m Applications Optical communications, safety equipment, light barriers O150 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Operating temperature range Storage temperature range Temperature coefficient of ID T = -40...120 C Test onditions Symbol A Tamb Tstg TC(ID) Value 0.78 -40 to +125 -40 to +125 7.4 Unit mm C C %/K Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions IF = 10 mA Forward voltage Breakdown voltage 2) Symbol VF VR 0,5 S ID RSH NEP D* CJ Min Typ 0.6 Max Unit V V IR = 10 A VR = 0 V VR = 0 V VR = 0 V VR = 5 V VR = 10 mV = 1300 nm = 1300 nm VR = 0 V 5 800 680 0.9 0.5 15 30 3.0x10 130 -14 12 Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300 nm1) Dark current Shunt resistance Noise equivalent power Specific detectivity Junction capacitance 1) 2) 1750 nm nm A/W 10 nA M W/ Hz cm Hz W -1 2.9x10 pF measured on bare chip on TO-18 header for information only Labeling Type EP-1300-1.0 Typ. ID [nA] Typ. S[A/W] Lot N Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Photodiode-Chip 16.05.2008 EPC-1300-1.0-0 rev. 07 T y p ic a l O p tic a l R e s p o n s iv ity 1 ,0 0 ,8 Responsivity (A/W) 0 ,6 0 ,4 0 ,2 0 ,0 400 600 800 1000 1200 1400 1600 1800 W a v e le n g th [n m ] D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re 100 Dark Current [nA] T K = 0 .7 4 % /K 10 1 20 40 60 80 100 120 A m b ie n t T e m p e ra tu re [C ] S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] Short-Circuit Current [arb. units] 1 ,0 4 1 ,0 2 1 ,0 0 0 ,9 8 0 ,9 6 0 ,9 4 0 ,9 2 0 ,9 0 T C (I S H ) = -0 .3 7 % /K 0 20 40 60 80 100 120 140 A m b ie n t T e m p e ra tu re [C ] We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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